BFR 360F H6327 Datasheet

BFR 360F H6327

Datasheet specifications

Datasheet's name BFR 360F H6327
File size 59.38 KB
File type pdf
Number of pages 15

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies BFR 360F H6327
  • Transistor Type: -
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 35mA
  • Power Dissipation (Pd): 210mW
  • Transition Frequency (fT): 14GHz
  • DC Current Gain (hFE@Ic,Vce): 120@15mA,3V
  • Collector Cut-Off Current (Icbo): 30nA
  • Collector-Emitter Breakdown Voltage (Vceo): 6V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
  • Package: TSFP-3
  • Manufacturer: Infineon Technologies

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